DRESDEN, GERMANY – Researchers at Nanoelectronic Materials Laboratory (NamLab) have developed a dopant-free transistor that could eventually be used in printable electronics.

They are calling the device “FET with tunable polarity”. At this stage of development, it is a demonstrator with simple inverter functionality. Industrial use could be realized in five years.

Electric fields give the transistor its switching characteristics, similar to a field effect transistor.

The device is based on silicon nanowires with dimensions up to 3 nanometers and is capable of being produced using an inkjet process, says Walter Weber, a researcher at NamLab. It has two gate electrodes and is controlled largely by the injection of charge carriers through Schottky contacts.

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