CircuEtch 200 anisotropic final etch for circuit formation in semiadditive and modified-semiadditive processes (SAP/mSAP) is used in IC substrate and substrate-like HDI manufacturing.

Reportedly defines traces with optimal geometry, zero undercut, and vertical trace sidewalls for excellent electrical performance. Bath has predictable etching rate over range of additive, copper, acid, chloride concentration and operating temp., while running in horizontal spray etching equipment. High-speed etching can remove up to 5µm of electrodeposited copper foil or electroless copper seed layer per min., while reducing surface roughness of pattern-plated electrolytic copper traces.

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