MARLBOROUGH, MA, - Rohm and Haas Electronic Materials has entered into a joint development agreement with IBM to create patterning materials and processes to enable implant at and below the 32 nm node.

The agreement is a joint collaboration to develop implant solutions for advanced technology nodes. Ion implantation is a set of process steps used to fabricate transistors. The implant process selectively introduces electrical charges into extremely small areas that have been defined by preceding lithographic steps.

At 32 nm and below, implant lithography has become a critical step in transistor creation, but constitutes a major technology hurdle. As semiconductor designs shrink, new challenges emerge in controlling implants used in transistor formation.

“Finding the right solutions to difficult technical challenges depends not only on strong engineering and design, but also on close collaboration with leaders in the semiconductor industry,” said Dr. James Fahey, president of Microelectronic Technologies for Rohm and Haas. “Partnering with IBM will accelerate the development of new materials and ensure that we are on track to meet the needs for 32 and 22 nm nodes.”

“We are proud to be working with Rohm and Haas Electronic Materials, combining IBM’s continued development of lithography solutions with Rohm and Haas’s material expertise,” said George Gomba, Director of Total Patterning Solutions for IBM Microelectronics.

Work on the joint collaboration will take place at IBM’s East Fishkill, Yorktown and Albany facilities and at Rohm and Haas Electronic Materials’ Advanced Technology Center in Marlborough, MA.

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