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Friday, 03 May 2013 16:44

Chip Packaging

“Multi-Die Integration Strategies and System Partitions in Mobile WWAN Devices”

Author:
Dr. Harrison Chang
Abstract: Multi-die integration is a complex decision. Cost-up factors include new capex, the cost of yield, the volumes (customized vs. standard), and the fluctuations of commodity pricing. Cost-down factors include less package and testing, less material, the change in the design cycle from rule-based to case-based, and lower overall system cost. (Meptec Roadmaps for Multi Die Integration Strategies and Drivers Proceedings, November 2012)

“High Density Organic Interposer for 2.5D/3D Multichip Packages”

Author:
Dyi-Chung Hu, Ph.D. and Chaowen Chung, Ph.D.
Abstract: Organic interposers have the potential to become high density interconnect substrates. They are cost-competitive and have loads of fine features. Keys to success include core and dielectric materials, fine lines and spaces, and via drilling technology, etc. Fabrication process equipment/concept plays an important role. Low-cost tool/equipment, such as steppers, LDI, via forming, etc. need to be developed. (Meptec Roadmaps for Multi Die Integration Strategies and Drivers Proceedings, November 2012)

Interposers

“Low Cost Solutions for 2.5D Packaging”

Author:
Young Do Kweon; This e-mail address is being protected from spambots. You need JavaScript enabled to view it .
Abstract: Micro system level module packaging could lead to higher packaging costs, costs that could weigh on the business plan. Interconnect-on-chip would be a serious factor for IC performance. Wide I/O memory could appear soon, and it would be applied first on mobile devices, increasing bandwidth dramatically. Wide I/O memory needs a fine-pitch interconnection with a high number of I/O. The interconnection gap between the IC and PCB increases because current PCB technology limit is not matched for IC interconnections. 3D and 2.5D packaging could be alternative solutions. In terms of thermal dissipation and cost, 3D packaging has limitations. Concern remains over silicon interposers because of the manufacturing cost.

Organic interposers could be a low-cost solution without changes to the current supply chain. (Meptec Roadmaps for Multi Die Integration Strategies and Drivers Proceedings, November 2012)

“Silicon Interposer Design: Architecture through Implementation”

Author:
Bill Acito
Abstract: Today’s interposer serves as a bridge between the higher density of today’s die and the IC package. Is interposer design an IC design challenge, or an IC packaging design challenge? Among the questions to ask: Who “owns” the design? What tools are available? What design process node? Course or fine width? What geometry design rules? What IC design structures are needed (power stripes, redundant via)? What layer materials for metal and dielectric? Who is making the silicon? And what is required for IC implementation/mask generation? (Meptec Roadmaps for Multi Die Integration Strategies and Drivers Proceedings, November 2012)

Signal Integrity

"Integrated Self-Healing for mm-Wave Power Amplifiers"

Authors: Steven M. Bowers, Kaushik Sengupta, Kaushik Dasgupta and Ali Hajimiri, Ph.D.; This e-mail address is being protected from spambots. You need JavaScript enabled to view it .
Abstract: A fully integrated self-healing mm-wave power amplifier heals process variation, load mismatch, and transistor failure with on-chip sensors, actuators and an integrated digital algorithm ASIC without external calibration. Measurements of 20 chips showed increased RF power up to 3dB, or reduced DC power by 50% in backoff at 28GHz. Healing 4-1 VSWR load mismatch for RF and DC power improvement was verified, and healing after laser-induced transistor failure increased RF power up to 4.8dB. (IEEE Transactions on Microwave Theory and Techniques, March 2013)

This column provides abstracts from recent industry conferences and company white papers. Our goal is to provide an added opportunity for readers to keep abreast of technology and business trends.

Last Updated on Friday, 03 May 2013 19:43
 

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