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Rohm & Haas, IBM Announce Agreement to Develop Implant Solutions
Written by Philip Buonpastore
Monday, 25 February 2008
MARLBOROUGH, MA, - Rohm and Haas Electronic Materials has entered into a joint development agreement with IBM to create patterning materials and processes to enable implant at and below the 32 nm node.
The agreement is a joint collaboration to develop implant solutions for
advanced technology nodes. Ion implantation is a set of process steps
used to fabricate transistors. The implant process selectively
introduces electrical charges into extremely small areas that have been
defined by preceding lithographic steps.
At 32 nm and below, implant lithography has become a critical step in
transistor creation, but constitutes a major technology hurdle. As
semiconductor designs shrink, new challenges emerge in controlling
implants used in transistor formation.
“Finding the right solutions to difficult technical challenges depends
not only on strong engineering and design, but also on close
collaboration with leaders in the semiconductor industry,” said Dr.
James Fahey, president of Microelectronic Technologies for Rohm and
Haas. “Partnering with IBM will accelerate the development of new
materials and ensure that we are on track to meet the needs for 32 and
22 nm nodes.”
“We are proud to be working with Rohm and Haas Electronic Materials,
combining IBM’s continued development of lithography solutions with
Rohm and Haas’s material expertise,” said George Gomba, Director of
Total Patterning Solutions for IBM Microelectronics.
Work on the joint collaboration will take place at IBM’s East Fishkill,
Yorktown and Albany facilities and at Rohm and Haas Electronic
Materials’ Advanced Technology Center in Marlborough, MA.
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